Capacitive Modulator Design Optimization Using Si and Strained-SiGe for Datacom Applications
نویسندگان
چکیده
Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or semiconductor insulator (SIS) architecture. In this paper, we develop model based on perturbative approach to optimize capacitive modulator full-Si including thin layer of strained SiGe. This is coupled with optimization algorithm in order estimate the highest optimal modulation amplitude different operating frequencies.
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ژورنال
عنوان ژورنال: IEEE Journal of Selected Topics in Quantum Electronics
سال: 2021
ISSN: ['1558-4542', '1077-260X']
DOI: https://doi.org/10.1109/jstqe.2020.3028447